Effect of hot-carrier energy relaxation on main properties of collapsing field domains in avalanching GaAs
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منابع مشابه
Collapsing Field Domains in Avalanche GaAs Transistors: Peculiar Phenomenon and Prospective Applications
High-current avalanche switching in a bipolar transistor structure in combination with negative differential mobility at extreme (~1 MV/cm) electric fields (e.g. in GaAs) causes generation of ultra-narrow, powerfully avalanching (“collapsing”) multiple field domains moving in a dense electron-hole plasma, which those domains form. Electrical switching with unique speed and high-power-density em...
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Using two optical techniques, we have studied the hot electron–optical phonon interactions in GaAs/AlxGa12xAs multiplequantum wells. Raman scattering measurements at 15 K are presented for the Al composition of x 0.3, 0.5, 0.7 and 1.0. The GaAs-like and AlAs-like phonon frequencies of the first-order modes are also measured as a function of Al composition. The optical phonon energies emitted b...
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تاریخ انتشار 2015